ELECTRONIC-STRUCTURE AND POSITRON STATES AT VACANCIES IN SI AND GAAS

被引：93

作者：

PUSKA, MJ

JEPSEN, O

GUNNARSSON, O

NIEMINEN, RM

机构：

[1] UNIV JYVASKYLA,DEPT PHYS,SF-40100 JYVASKYLA,FINLAND

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2695

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2695 / 2705

页数：11

共 50 条

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[26] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

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[27] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD [J].

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[28] SELF-CONSISTENT IMPURITY CALCULATIONS IN THE ATOMIC-SPHERES APPROXIMATION [J].

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ANDERSEN, OK .

PHYSICAL REVIEW B, 1983, 27 (12) :7144-7168

[29] ANNIHILATION OF A POSITRON IN A VACANCY IN ALUMINUM [J].

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PHYSICAL REVIEW B, 1980, 22 (10) :4572-4589

[30] COMPUTATIONAL ANALYSIS OF POSITRON EXPERIMENTS [J].

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