SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD

被引：220

作者：

GLOTZEL, D

SEGALL, B

ANDERSEN, OK

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(80)90920-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：403 / 406

页数：4

共 18 条

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[8] SELF-CONSISTENT LMTO APPROACH TO THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS - GAAS
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[9] MODIFIED MUFFIN TIN POTENTIALS FOR BAND STRUCTURE OF SEMICONDUCTORS
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