SPECTROSCOPY AND DIODE LASER-PUMPED OPERATION OF TM, HO-YAG

被引:294
作者
FAN, TY
HUBER, G
BYER, RL
MITZSCHERLICH, P
机构
[1] STANFORD UNIV,EDWARD L GINZTON LAB,STANFORD,CA 94305
[2] UNIV HAMBURG,INST ANGEW PHYS,D-2000 HAMBURG 36,FED REP GER
关键词
BAND STRUCTURE - FLUORESCENCE - GARNETS - LASERS; SEMICONDUCTOR; -; SPECTROSCOPY; ABSORPTION;
D O I
10.1109/3.213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spectroscopic measurements and analysis of diode laser-pumped operation of Tm, Ho:YAG at 2. 1 mu m at room temperature have been performed. The peak effective stimulated emission cross section is measured to be 9 multiplied by 10**-**2**1 cm**2 at 2. 091 mu m and the upper state lifetime is 8. 5 ms. Under diode laser pumping, thresholds of 4. 4 mW of absorbed power and slope efficiency of 19% have been demonstrated. Calculations of threshold power are performed based on the spectroscopic measurements. An energy transfer upconversion process is identified which leads to a sublinear rise in upper-state population with pump power.
引用
收藏
页码:924 / 933
页数:10
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