SPECTROSCOPY AND DIODE LASER-PUMPED OPERATION OF TM, HO-YAG

被引：294

作者：

FAN, TY

HUBER, G

BYER, RL

MITZSCHERLICH, P

机构：

[1] STANFORD UNIV,EDWARD L GINZTON LAB,STANFORD,CA 94305

[2] UNIV HAMBURG,INST ANGEW PHYS,D-2000 HAMBURG 36,FED REP GER

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 06期

关键词：

BAND STRUCTURE - FLUORESCENCE - GARNETS - LASERS; SEMICONDUCTOR; -; SPECTROSCOPY; ABSORPTION;

D O I：

10.1109/3.213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spectroscopic measurements and analysis of diode laser-pumped operation of Tm, Ho:YAG at 2. 1 mu m at room temperature have been performed. The peak effective stimulated emission cross section is measured to be 9 multiplied by 10**-**2**1 cm**2 at 2. 091 mu m and the upper state lifetime is 8. 5 ms. Under diode laser pumping, thresholds of 4. 4 mW of absorbed power and slope efficiency of 19% have been demonstrated. Calculations of threshold power are performed based on the spectroscopic measurements. An energy transfer upconversion process is identified which leads to a sublinear rise in upper-state population with pump power.

引用

页码：924 / 933

页数：10

共 34 条

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