A COMPLEMENTARY HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR TECHNOLOGY BASED ON INAS/ALSB/GASB

被引：22

作者：

LONGENBACH, KF ^{[1
]}

BERESFORD, R ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 10期

关键词：

D O I：

10.1109/16.59918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new complementary heterojunction held effect transistor technology based on the InAs/ AlSb/ GaSb system. The structure is formed by the vertical integration of InAs n-channel and GaSb p-channel HFET devices. The superior transport properties of electrons in InAs and holes in GaSb and their band offsets to AlSb or AlSbAs yield devices with transconductances much greater than AlGaAs/GaAs n- and p-channel HFET’s. As a result, it is shown that a complementary circuit fabricated from these devices could provide room temperature performance up to six times greater than that predicted for AlGaAs/GaAs complementary circuits. © 1990 IEEE

引用

页码：2265 / 2267

页数：3

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