HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1750 - 1754

[3] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[4] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185

[5] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3324 - 3326

[6] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P155

[9] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591

[10] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1750 - 1754

[3] MONTE-CARLO SIMULATION OF REFLECTING CONTACT-BEHAVIOR ON BALLISTIC DEVICE SPEED [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 332 - 334

[4] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 181 - 185

[5] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3324 - 3326

[6] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] CONWELL EM, 1967, HIGH FIELD TRANSPORT, P155

[9] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591

[10] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &