DIELECTRIC AND INTERFACIAL PROPERTIES OF INP PLASMA-GROWN OXIDES

被引：12

作者：

ALREFAIE, SN

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 06期

关键词：

D O I：

10.1007/BF00617860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：575 / 582

页数：8

共 29 条

[1]

ALREFAIE SN, 1988, JPN J APPL PHYS 1, V27, P273, DOI 10.1143/JJAP.27.273

[2] INDIUM PHOSPHIDE OXIDE ON InP FOR MOSFET APPLICATIONS. [J].

Al-Refaie, S.N. ;

Carroll, J.E. .

IEE Proceedings I: Solid State and Electron Devices, 1981, 128 (06) :207-210

[3]

CHEN LI, 1972, SOLID STATE ELECTRON, V15, P979, DOI 10.1016/0038-1101(72)90139-6

[4] Dispersion and absorption in dielectrics I. Alternating current characteristics [J].

Cole, KS ;

Cole, RH .

JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (04) :341-351

[5]

DANIEL VV, 1967, DIELECTRIC RELAXATIO, pCH2

[6] AUTOMATIC C-V PLOTTER [J].

FORWARD, KE ;

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (06) :487-489

[7]

FROHMANBENTCHKO.D, 1970, P IEEE, V28, P1207

[8] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS [J].

GEIB, KM ;

GOODNICK, SM ;

LIN, DY ;

GANN, RG ;

WILMSEN, CW ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :516-521

[9]

GOETZBERGER A, 1976, CRC CRIT R SOLID ST, P1

[10] USE OF COMPLEX CONDUCTIVITY IN THE REPRESENTATION OF DIELECTRIC PHENOMENA [J].

GRANT, FA .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (01) :76-80

← 1 2 3 →