ISOLATED INTERSTITIALS IN SILICON .2.

被引：19

作者：

SINGHAL, SP

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.5.4203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4203 / &

共 6 条

[1] THEORY OF SCATTERING IN SOLIDS [J].

CALLAWAY, J .

[2] ELECTRONIC STRUCTURE OF SINGLE VACANCY IN SILICON [J].

CALLAWAY, J .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2556-&

[3] T MATRIX AND PHASE SHIFTS IN SOLID-STATE SCATTERING THEORY [J].

CALLAWAY, J .

PHYSICAL REVIEW, 1967, 154 (02) :515-&

[4] ISOLATED INTERSTITIALS IN SILICON [J].

SINGHAL, SP .

PHYSICAL REVIEW B, 1971, 4 (08) :2497-&

[5] PROPERTIES OF INTERSTITIAL IN DIAMOND-TYPE LATTICE [J].

WATKINS, GD ;

MESSMER, RP ;

WEIGEL, C ;

PEAK, D ;

CORBETT, JW .

[6]

WATKINS GD, PRIVATE COMMUNICATIO