THE LOCAL-DISTRIBUTION OF SIC FORMED BY DIAMOND HETEROEPITAXY ON SILICON STUDIED BY INFRARED-SPECTROSCOPY

被引：3

作者：

FRIEDRICH, M

MORLEY, S

MAINZ, B

HINNEBERG, HJ

ZAHN, DRT

机构：

[1] Institut für Physik, TU Chemnitz-Zwickau

来源：

关键词：

DIAMOND FILMS; INFRARED TRANSMISSION; INTERFACE; SILICON CARBIDE;

D O I：

10.1016/0925-9635(94)00257-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fourier transform spectroscopy in the infrared spectral range was applied in order to characterize interlayers and overlayers formed by the diamond deposition process on silicon substrates. The transmittance spectra are compared with model calculations. An analysis of lineshape, frequency shift and halfwidth of the SiC phonon band yields information on structural properties which are found to depend strongly on the lateral position on the sample surface.

引用

页码：944 / 947

页数：4

共 6 条

[1]

DEUTSCHMANN S, 1994, 13TH P INT C EL MI A, V2, P579

[2] MICROWAVE PLASMA APPARATUS FOR DEPOSITION OF HYDROGENATED AMORPHOUS-CARBON LAYERS [J].