AUGER PROFILING OF ABRUPT LPE ALXGA1-XAS-GAAS HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CHANG CC, 1974, CHARACTERIZATION SOL, P509

[3] INTERDIFFUSION BETWEEN GAAS AND ALAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141

[4] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266

[5] EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5226 - 5228

[6] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 417 - 419

[7] MCGUIRE GE, 1976, 1976 P EL CHEM SOC M

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[9] Sahai R., 1975, Critical Reviews in Solid State Sciences, V5, P565, DOI 10.1080/10408437508243513

[10] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 391 - 408

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CHANG CC, 1974, CHARACTERIZATION SOL, P509

[3] INTERDIFFUSION BETWEEN GAAS AND ALAS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141

[4] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266

[5] EFFECTS OF ZN CROSS DIFFUSION ON PROPERTIES OF N(ALXGA1-XAS)-P(GAAS) HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5226 - 5228

[6] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 417 - 419

[7] MCGUIRE GE, 1976, 1976 P EL CHEM SOC M

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[9] Sahai R., 1975, Critical Reviews in Solid State Sciences, V5, P565, DOI 10.1080/10408437508243513

[10] PROPERTIES OF GE-DOPED GAAS AND ALXGA1-XAS,SN-DOPED ALXGA1-XAS AND SI-TE-DOPED GAAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) : 391 - 408