PHOTOSENSITIVITY AND SCANNING OF SILICON IMAGE DETECTOR ARRAYS

被引：38

作者：

CHAMBERLAIN, SG

机构：

[1] Allen Clark Research Centre, Plessey Company, Ltd., Caswell, Towcester, Northants

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1969年 / SC 4卷 / 06期

关键词：

D O I：

10.1109/JSSC.1969.1050032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first part of this paper deals with the basic photodiode unit, its principle of operation, and the factors that affect the photodiode and array sensitivity. Experimental results of the planar Si p+-n photodiode are presented. Design and layout considerations including the integration time are also given. The second part of this paper deals with scanning of photodiode arrays. Detail design considerations are given for a static MOST ring counter. A dynamic shift register with clocked loads for integral scanning is also considered. Design considerations of a realized photosensing matrix with integral scanning are given. Finally, scanning problems of large arrays are briefly considered. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：333 / +

页数：1

共 9 条

[1]

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[2]

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[3]

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[5]

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[8] OPERATION OF P-N JUNCTION PHOTODETECTORS IN A PHOTON FLUX INTEGRATING MODE [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1967, SC 2 (03) :65-&

[9] A SELF-SCANNED SOLID-STATE IMAGE SENSOR [J].

WEIMER, PK ;

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MEYER, JE ;

MERAYHOR.L ;

PIKE, WS .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (09) :1591-&

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