LOCAL ENVIRONMENT OF ARSENIC IMPURITIES IN SEMI-INSULATING POLYCRYSTALLINE SILICON

被引：5

作者：

CANOVA, E ^{[1
]}

KAO, YH ^{[1
]}

MARSHALL, T ^{[1
]}

ARNOLD, E ^{[1
]}

机构：

[1] N AMER PHILIPS CORP,PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.39.3131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3131 / 3137

页数：7

共 22 条

[1] Arnold E., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P149
[2] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[3] LATTICE-DISTORTIONS FOR ARSENIC IN SINGLE-CRYSTAL SILICON
ERBIL, A
WEBER, W
CARGILL, GS
BOEHME, RF
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1392 - 1394
[4] ERBIL A, 1985, MATER RES SOC S P, V41, P275
[5] GREENBERG B, 1987, B AM PHYS SOC, V32, P532
[6] GREENBERG B, IN PRESS J ELECTROCH
[7] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[8] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS
HARTSTEIN, A
TSANG, JC
DIMARIA, DJ
DONG, DW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 836 - 837
[9] HAYES TM, 1982, SOLID STATE PHYS, V37, P173
[10] Silicium arsenide
Klemm, W
Pirscher, P
[J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1941, 247 (03): : 211 - 220