CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS

被引：139

作者：

HAMASAKI, M

ADACHI, T

WAKAYAMA, S

KIKUCHI, M

机构：

来源：

关键词：

D O I：

10.1063/1.325356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3987 / 3992

页数：6

共 10 条

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[4] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
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