SILICON MONOXIDE THIN-FILMS

[1] MATRIX ISOLATION STUDIES OF GROUP-IV OXIDES .I. INFRARED SPECTRA AND STRUCTURES OF SIO, SI2O2, AND SI3O3 [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (10) : 4189 - &

[2] Bonhoeffer KF, 1928, Z PHYS CHEM-STOCH VE, V131, P363

[3] BREWER W, 1957, J PHYS CHEM SOLIDS, V2, P286

[4] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350

[5] STRUCTURE OF SILICON OXIDE FILMS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 593 - &

[6] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308

[7] HAAS G, 1950, J AM CERAM SOC, V33, P353

[8] HASTIE JW, 1969, INORG CHIM ACTA, V3, P601

[9] HOLLINGER G, 1974, TETRAHEDRALLY BONDED, P102

[10] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 27 (08) : 452 - 454

[1] MATRIX ISOLATION STUDIES OF GROUP-IV OXIDES .I. INFRARED SPECTRA AND STRUCTURES OF SIO, SI2O2, AND SI3O3 [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (10) : 4189 - &

[2] Bonhoeffer KF, 1928, Z PHYS CHEM-STOCH VE, V131, P363

[3] BREWER W, 1957, J PHYS CHEM SOLIDS, V2, P286

[4] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350

[5] STRUCTURE OF SILICON OXIDE FILMS [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 593 - &

[6] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308

[7] HAAS G, 1950, J AM CERAM SOC, V33, P353

[8] HASTIE JW, 1969, INORG CHIM ACTA, V3, P601

[9] HOLLINGER G, 1974, TETRAHEDRALLY BONDED, P102

[10] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1975, 27 (08) : 452 - 454