ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS

被引：54

作者：

HAMASAKI, M ^{[1
]}

ADACHI, T ^{[1
]}

WAKAYAMA, S ^{[1
]}

KIKUCHI, M ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA 240,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1098(77)90040-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：591 / 593

页数：3

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