HIGH-TEMPERATURE ACTIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN AN AR-O-2 ATMOSPHERE

被引:81
作者
NARUSHIMA, T [1 ]
GOTO, T [1 ]
IGUCHI, Y [1 ]
HIRAI, T [1 ]
机构
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN
关键词
D O I
10.1111/j.1151-2916.1991.tb06803.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Active oxidation behavior of chemically vapor-deposited silicon carbide in an Ar-O2 atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures (P(O2)t). The values of P(O2)t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates (K(a)) increased with increasing O2 partial pressures and total gas flow rates. The rate-controlling step of the active oxidation was concluded to be O2 diffusion through the gaseous boundary layer.
引用
收藏
页码:2583 / 2586
页数:4
相关论文
共 21 条
[1]   ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SIC [J].
ANTILL, JE ;
WARBURTON, JB .
CORROSION SCIENCE, 1971, 11 (06) :337-+
[2]   EFFECT OF FISSION FRAGMENT IRRADIATION UPON ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SELF-BONDED REFEL SILICON-CARBIDE AT 850-950DEGREESC C [J].
BENNETT, MJ ;
CHAFFEY, GH .
JOURNAL OF NUCLEAR MATERIALS, 1974, 52 (02) :184-190
[3]  
Besmann TM, 1977, ORNLTM5775
[4]  
BIRD RB, 1960, TRANSPORT PHENOMENA, P511
[5]  
Chase M.W., 1985, JANAF THERMOCHEMICAL, V3rd
[6]   OXIDATION-KINETICS OF SILICON-CARBIDE CRYSTALS AND CERAMICS .1. IN DRY OXYGEN [J].
COSTELLO, JA ;
TRESSLER, RE .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (09) :674-681
[7]  
DEMESQUITA AH, 1967, ACTA CRYSTALLOGR, V23, P610
[8]   OXIDATION BEHAVIOR OF SILICON CARBIDE [J].
ERVIN, G .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) :347-352
[9]  
Fujita S., 1964, KAGAKU KOGAKU, V28, P251
[10]   Diffusion coefficients in gaseous systems [J].
Gilliland, ER .
INDUSTRIAL AND ENGINEERING CHEMISTRY, 1934, 26 :681-685