EFFECT OF FISSION FRAGMENT IRRADIATION UPON ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SELF-BONDED REFEL SILICON-CARBIDE AT 850-950DEGREESC C

被引:6
作者
BENNETT, MJ [1 ]
CHAFFEY, GH [1 ]
机构
[1] UNITED KINGDOM ATOM ENERGY ASSOC,RES ESTAB,MAT DEV DIV,HARWELL DIDCOT,OXFORDSHIRE,ENGLAND
关键词
D O I
10.1016/0022-3115(74)90166-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:184 / 190
页数:7
相关论文
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[4]   PASSIVITY DURING THE OXIDATION OF SILICON AT ELEVATED TEMPERATURES [J].
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