EFFECT OF FISSION FRAGMENT IRRADIATION UPON PASSIVE OXIDATION OF SILICON-BONDED SILICON-CARBIDE BY OXYGEN AT 950 DEGREES C

被引:3
作者
BENNETT, MJ [1 ]
CHAFFEY, GH [1 ]
机构
[1] UNITED KINGDOM ATOM ENERGY AUTHOR,ATOM ENERGY RES ESTAB,MAT DEV DIV,HARWELL,BERKSHIRE,ENGLAND
关键词
D O I
10.1016/0022-3115(73)90147-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:131 / 138
页数:8
相关论文
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[6]   EFFECT OF FISSION-FRAGMENT IRRADIATION UPON OXIDATION OF SILICON CARBIDE BY OXYGEN AT 950 DEGREES C [J].
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