EFFECT OF FISSION-FRAGMENT IRRADIATION UPON OXIDATION OF SILICON CARBIDE BY OXYGEN AT 950 DEGREES C

被引:4
作者
BENNETT, MJ
CHAFFEY, GH
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D O I
10.1016/0022-3115(71)90144-9
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T [工业技术];
学科分类号
08 ;
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页码:253 / &
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