OXIDATION OF SILICON CARBIDE AT 1150 DEGREES TO 1400 DEGREES C AND AT 9 X 10 TO 5 X 10-1 TORR OXYGEN PRESSURE

被引：74

作者：

GULBRANS.EA

ANDREW, KF

BRASSART, FA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 12期

关键词：

D O I：

10.1149/1.2423812

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1311 / &

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