CHARGING STUDIES USING THE CHARM2 WAFER SURFACE CHARGING MONITOR

被引：5

作者：

LUKASZEK, W ^{[1
]}

DIXON, W ^{[1
]}

QUEK, E ^{[1
]}

WEISENBERGER, W ^{[1
]}

HO, S ^{[1
]}

机构：

[1] ION IMPLANT SERV,SUNNYVALE,CA 94086

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95065-D

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A second generation wafer surface potential monitor (CHARM2) employing floating gate EEPROM transistors as sensing/memory elements is described, and applied to the study of charging behavior of bare and patterned-resist-covered wafers during high-current arsenic implants. Analysis of the data supports the occurrence of both positive and negative charging transients. Moreover, the destructive power of the positive transient increases many orders of magnitude in the case of resist-covered wafers.

引用

页码：301 / 305

页数：5

共 7 条

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LINDSEY, D .

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[4]

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[5]

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[6]

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[7]

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