CHARGING STUDIES WITH CHARM

被引：2

作者：

LUKASZEK, W ^{[1
]}

NAHAR, RK ^{[1
]}

MCCARTHY, A ^{[1
]}

WEISENBERGER, W ^{[1
]}

CHEREKDJIAN, S ^{[1
]}

LINDSEY, D ^{[1
]}

机构：

[1] ION IMPLANT SERV,SUNNYVALE,CA 94086

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96151-A

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A novel, EEPROM transistor-based wafer surface-charge monitor has been applied to quantitative assessment of surface charging during 120 kV, 5 x 10(15) arsenic ion implants under a variety of beam-current, flood-gun and argon pressure conditions. Least negative charging was observed with argon backfill, in the absence of flood-gun electrons. Comparison of devices with different-sized charge-collection electrodes supports the voltage source model of surface charging.

引用

收藏

页码：143 / 147

页数：5

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