EFFECT OF RESIST PATTERNING ON GATE OXIDE INTEGRITY IN SOURCE DRAIN IMPLANT

被引:11
作者
TONG, R
MCNALLY, P
机构
关键词
D O I
10.1016/0168-583X(85)90660-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:376 / 381
页数:6
相关论文
共 5 条
[1]  
MACK M, 1984, COMMUNICATION
[2]   DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].
OSBURN, CM ;
ORMOND, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+
[3]  
OSBURN CM, 1982, VLSI SCI TECHNOLOGY, P354
[4]   EXPERIMENTAL-DETERMINATION OF CURRENT PATHS OF IONS IMPLANTED INTO INSULATORS [J].
WADA, Y ;
SATO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) :2289-2290
[5]  
WU CP, 1983, RCA REV, V44, P48