ANALYSIS AND MODELING OF FLOATING-GATE EEPROM CELLS

被引：115

作者：

KOLODNY, A

NIEH, STK

EITAN, B

SHAPPIR, J

机构：

[1] INTEL CORP,SANTA CLARA,CA 95051

[2] WAFERSCALE INTEGRAT INC,FREMONT,CA 94538

[3] HEBREW UNIV JERUSALEM,JERUSALEM,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/T-ED.1986.22576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：835 / 844

页数：10

共 23 条

[1] AVALANCHE INJECTION OF HOLES INTO SIO2 [J].

AITKEN, JM ;

YOUNG, DR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2128-2134

[2] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

EITAN, B ;

KOLODNY, A .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :106-108

[3]

EUZENT B, 1981, P INT RELIABILITY PH

[4]

GUPTA A, 1982, FEB ISSCC, P184

[5]

HOGIWARA T, 1980, IEEE J SOLID STATE C, V15, P346

[6]

Hsieh Y. N., 1980, International Electron Devices Meeting. Technical Digest, P598

[7] POSITIVE AND NEGATIVE CHARGING OF THERMALLY GROWN SIO2 INDUCED BY FOWLER-NORDHEIM EMISSION [J].

ITSUMI, M .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3491-3497

[8]

JENQ C, 1981, INT ELECTRON DEVICES, P388

[9]

JOHNSON WS, 1980, FEB ISSCC, P152

[10] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].

KANE, EO .

PHYSICAL REVIEW, 1967, 159 (03) :624-&

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