学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
POSITIVE AND NEGATIVE CHARGING OF THERMALLY GROWN SIO2 INDUCED BY FOWLER-NORDHEIM EMISSION
被引:54
作者
:
ITSUMI, M
论文数:
0
引用数:
0
h-index:
0
ITSUMI, M
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1981年
/ 52卷
/ 05期
关键词
:
D O I
:
10.1063/1.329126
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3491 / 3497
页数:7
相关论文
共 25 条
[1]
HOT-CARRIER INSTABILITY IN IGFETS
ABBAS, SA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
ABBAS, SA
DOCKERTY, RC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
DOCKERTY, RC
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(03)
: 147
-
148
[2]
ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
AITKEN, JM
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YOUNG, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1196
-
1198
[3]
TRAPPING EFFECTS IN IRRADIATED AND AVALANCHE-INJECTED MOS CAPACITORS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
BAKOWSKI, M
COCKRUM, RH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
COCKRUM, RH
ZAMANI, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
ZAMANI, N
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
MASERJIAN, J
VISWANATHAN, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
VISWANATHAN, CR
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
: 1233
-
1238
[4]
LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
AITKEN, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 898
-
906
[5]
CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(09)
: 4830
-
4841
[6]
EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
: 42
-
47
[7]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[8]
CARRIER INJECTION INTO SIO2 FROM SI SURFACE DRIVEN TO AVALANCHE BREAKDOWN BY A LINEAR RAMP PULSE, AND TRAPPING, DISTRIBUTION AND THERMAL ANNEALING OF INJECTED HOLES IN SIO2
NAGAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
NAGAI, K
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
HAYASHI, Y
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
TARUI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(10)
: 1539
-
1545
[9]
SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM
NAKAGIRI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NAKAGIRI, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
: 1610
-
1617
[10]
I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES
NEUGEBAUER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
NEUGEBAUER, CA
BURGESS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
BURGESS, JF
JOYNSON, RE
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
JOYNSON, RE
MUNDY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
MUNDY, JL
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(12)
: 5041
-
5044
←
1
2
3
→
共 25 条
[1]
HOT-CARRIER INSTABILITY IN IGFETS
ABBAS, SA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
ABBAS, SA
DOCKERTY, RC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
DOCKERTY, RC
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(03)
: 147
-
148
[2]
ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
AITKEN, JM
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YOUNG, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1196
-
1198
[3]
TRAPPING EFFECTS IN IRRADIATED AND AVALANCHE-INJECTED MOS CAPACITORS
BAKOWSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
BAKOWSKI, M
COCKRUM, RH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
COCKRUM, RH
ZAMANI, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
ZAMANI, N
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
MASERJIAN, J
VISWANATHAN, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
VISWANATHAN, CR
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
: 1233
-
1238
[4]
LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
AITKEN, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 898
-
906
[5]
CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
DIMARIA, DJ
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
DONG, DW
论文数:
0
引用数:
0
h-index:
0
DONG, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(09)
: 4830
-
4841
[6]
EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
: 42
-
47
[7]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[8]
CARRIER INJECTION INTO SIO2 FROM SI SURFACE DRIVEN TO AVALANCHE BREAKDOWN BY A LINEAR RAMP PULSE, AND TRAPPING, DISTRIBUTION AND THERMAL ANNEALING OF INJECTED HOLES IN SIO2
NAGAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
NAGAI, K
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
HAYASHI, Y
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
TARUI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1975,
14
(10)
: 1539
-
1545
[9]
SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM
NAKAGIRI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NAKAGIRI, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
: 1610
-
1617
[10]
I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES
NEUGEBAUER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
NEUGEBAUER, CA
BURGESS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
BURGESS, JF
JOYNSON, RE
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
JOYNSON, RE
MUNDY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV CTR, SCHENECTADY, NY 12301 USA
MUNDY, JL
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(12)
: 5041
-
5044
←
1
2
3
→