TRAPPING EFFECTS IN IRRADIATED AND AVALANCHE-INJECTED MOS CAPACITORS

被引：16

作者：

BAKOWSKI, M ^{[1
]}

COCKRUM, RH ^{[1
]}

ZAMANI, N ^{[1
]}

MASERJIAN, J ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1233 / 1238

页数：6

共 19 条

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[5]

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[6] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS [J].

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APPLIED PHYSICS LETTERS, 1976, 29 (06) :377-379

[7] INTERFACE-STATE EFFECTS IN IRRADIATED MOS STRUCTURES [J].

HUGHES, GW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5357-5359

[8]

HUGHES GW, 1978, HDLCR77088 RCA REP

[9]

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[10]

MCGARRITY JM, 1978, MAR P INT TOP C PHYS, P428

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