CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS

[1] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[2] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[3] GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS) [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5826 - 5829

[4] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[5] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735

[6] CENTROID LOCATION OF IMPLANTED IONS IN SIO2 LAYER OF MOS STRUCTURES USING PHOTO IV TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5441 - 5444

[7] DONG D, 1978, ELECTROCHEM SOC, V125, P819

[8] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[9] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992

[10] IRENE EA, COMMUNICATION

[1] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[2] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[3] GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS) [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5826 - 5829

[4] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[5] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735

[6] CENTROID LOCATION OF IMPLANTED IONS IN SIO2 LAYER OF MOS STRUCTURES USING PHOTO IV TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5441 - 5444

[7] DONG D, 1978, ELECTROCHEM SOC, V125, P819

[8] GROVE AS, 1967, PHYS TECHNOL S, pCH9

[9] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992

[10] IRENE EA, COMMUNICATION