CARRIER INJECTION INTO SIO2 FROM SI SURFACE DRIVEN TO AVALANCHE BREAKDOWN BY A LINEAR RAMP PULSE, AND TRAPPING, DISTRIBUTION AND THERMAL ANNEALING OF INJECTED HOLES IN SIO2

被引：25

作者：

NAGAI, K ^{[1
]}

HAYASHI, Y ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 10期

关键词：

D O I：

10.1143/JJAP.14.1539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1539 / 1545

页数：7

共 11 条

[1]

BARTELINK DJ, 1963, PHYS REV, V130, P792

[2]

HAYASHI Y, 1974, J JAPAN SOC APPL P S, V45, P363

[3] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[4] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

NICOLLIAN, EH ;

GOETZBERGER, A ;

BERGLUND, CN .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :174-+

[5] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J].

NICOLLIAN, EH ;

BERGLUND, CN .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3052-+

[6] HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHE [J].

POIRIER, R ;

OLIVIER, J .

APPLIED PHYSICS LETTERS, 1969, 15 (11) :364-&

[7] ELECTRICALLY REPROGRAMABLE NONVOLATILE SEMICONDUCTOR MEMORY [J].

TARUI, Y ;

NAGAI, K ;

HAYASHI, Y .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :369-&

[8]

TARUI Y, 1974, J JAPAN SOC APPL P S, V45, P349

[9]

TARUI Y, 1972, J JAP SOC APPL PHY S, V41, P155

[10] HOLE CURRENTS IN THERMALLY GROWN SIO2 [J].

VERWEY, JF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2273-&

← 1 2 →