SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM

被引：20

作者：

NAKAGIRI, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 10期

关键词：

D O I：

10.1143/JJAP.13.1610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1610 / 1617

页数：8

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