THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT

被引：36

作者：

ELLIOTT, JH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1961年 / 12卷 / 01期

关键词：

D O I：

10.1016/0029-554X(61)90114-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：60 / 66

页数：7

共 10 条

[1]

EVANS J, 1958, FUNDAMENTAL PRINCIPL, pCH2

[2]

FRIEDLAND SS, 1960, NUCLEONICS, V18, P54

[3]

GOULDING FS, 1961, UNPUB NUCL INSTR MET, V12

[4]

HALBERT ML, 1960, NUCL INSTRUM METHODS, V8, P106

[5]

HANSEN W, COMMUNICATION

[6] REACTION C-12(ALPHA,D)N-14 [J].

HARVEY, BG ;

CERNY, J .

PHYSICAL REVIEW, 1960, 120 (06) :2162-2168

[7]

JOHN W, 1955, UCRL3093 U CAL RAD L

[8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[9] ION DRIFT IN AN N-P JUNCTION [J].

PELL, EM .

[10]

PELL EM, COMMUNICATION