INVESTIGATION BY RAMAN-SCATTERING OF THE PROPERTIES OF III-V COMPOUND SEMICONDUCTORS AT HIGH-TEMPERATURE

被引：20

作者：

SHEALY, JR ^{[1
]}

WICKS, GW ^{[1
]}

机构：

[1] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1173 / 1175

页数：3

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