AP-N-P ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-TEMPERATURE OPERATION

被引：12

作者：

FROST, MS

RICHES, M

KERR, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.337168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2149 / 2153

页数：5

共 16 条

[1]

ANDERSON WT, 1982, IEEE T IND ELECTRON, V92, P149

[2] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

CHAND, N ;

HENDERSON, T ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

GIACOLETTO, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :302-304

[3] TEMPERATURE-DEPENDENCE OF CURRENT GAIN IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHAND, N ;

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

KOPP, W ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1086-1088

[4] FABRICATION AND HIGH-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS AND RING-OSCILLATORS [J].

DOERBECK, FH ;

DUNCAN, WM ;

MCLEVIGE, WV ;

YUAN, HT .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) :136-139

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] THE HEMT - A SUPERFAST TRANSISTOR [J].

MORKOC, H ;

SOLOMON, PM .

IEEE SPECTRUM, 1984, 21 (02) :28-35

[7]

NICOLET MA, 1983, SOLID STATE TECHNOL, V26, P129

[8]

NIEBERGING WC, 1981, 1981 P C HIGH TEMP E, P13

[9] INTEGRATED-CIRCUIT CHARACTERISTICS AT 260-DEGREES-C FOR AIRCRAFT ENGINE-CONTROL APPLICATIONS [J].

PALKUTI, LJ ;

PRINCE, JL ;

GLISTA, AS .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1979, 2 (04) :405-412

[10] USE OF A TIN BARRIER TO IMPROVE GAAS-FET OHMIC CONTACT RELIABILITY [J].

REMBA, RD ;

SUNI, I ;

NICOLET, MA .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) :437-438

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