FABRICATION AND HIGH-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS AND RING-OSCILLATORS

被引：8

作者：

DOERBECK, FH

DUNCAN, WM

MCLEVIGE, WV

YUAN, HT

机构：

来源：

关键词：

D O I：

10.1109/TIE.1982.356650

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：136 / 139

页数：4

共 11 条

[1] DENING DC, 1979, IEDM TECH DIG
[2] ION-IMPLANTED GAAS X-BAND POWER FETS
DOERBECK, FH
MACKSEY, HM
BREHM, GE
FRENSLEY, WR
[J]. ELECTRONICS LETTERS, 1979, 15 (18) : 576 - 578
[3] DOERBECK FH, I PHYS C SER, V7, P205
[4] DOERBECK FH, 1979, I PHYSICS C SERIES, V45, P335
[5] DUNCAN WM, 1980, AUG WORKSH PROC TECH
[6] HELIX MJ, 1977, IEDM TECH DIG, P195
[7] MCLEVIGE WV, 1977, J APPL PHYS, V48, P33
[8] EXTREME TEMPERATURE-RANGE MICROELECTRONICS
PALMER, DW
HECKMAN, RC
[J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1978, 1 (04): : 333 - 340
[9] STRACK H, 1966, I PHYS C SER, V3, P206
[10] ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS
YUAN, HT
DOERBECK, FH
MCLEVIGE, WV
[J]. ELECTRONICS LETTERS, 1980, 16 (16) : 637 - 638