ION-IMPLANTED GAAS X-BAND POWER FETS

被引：16

作者：

DOERBECK, FH

MACKSEY, HM

BREHM, GE

FRENSLEY, WR

机构：

[1] Texas Instruments Incorporated, Central Research Laboratories, Dallas

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 18期

关键词：

Field-effect transistors; Power transistors; Solid-state microwave devices;

D O I：

10.1049/el:19790414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Active layers for GaAs power f.e.t.s have been produced by Si implantation into Cr-doped substrates followed by a simple proximity-annealing technique. Devices fabricated on these layers have up to 1·05 W/mm gate width at 10 GHz. This performance is equal to that of epitaxial devices. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：576 / 578

页数：3

共 8 条

[1] DOERBECK FH, 1979 I PHYS C SER, P335
[2] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596
[3] IMMORLICA AA, 1978, IEEE T ED, V25, P368
[4] LADD GO, 1977, 6TH P BIENN CORN EL, P289
[5] DEPENDENCE OF GAAS POWER MESFET MICROWAVE PERFORMANCE ON DEVICE AND MATERIAL PARAMETERS
MACKSEY, HM
ADAMS, RL
MCQUIDDY, DN
SHAW, DW
WISSEMAN, WR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 113 - 122
[6] GAAS POWER FETS WITH ELECTRON-BEAM-DEFINED GATES
MACKSEY, HM
BLOCKER, TG
DOERBECK, FH
[J]. ELECTRONICS LETTERS, 1977, 13 (11) : 312 - 313
[7] MANDAL RP, 1979 I PHYS C, P462
[8] STONEHAM E, 1977, IEEE T ED, V25, P330

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