DEPENDENCE OF GAAS POWER MESFET MICROWAVE PERFORMANCE ON DEVICE AND MATERIAL PARAMETERS

被引：25

作者：

MACKSEY, HM ^{[1
]}

ADAMS, RL ^{[1
]}

MCQUIDDY, DN ^{[1
]}

SHAW, DW ^{[1
]}

WISSEMAN, WR ^{[1
]}

机构：

[1] TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 122

页数：10

共 11 条

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[2]

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[4] HIGH-EFFICIENCY GAAS MESFET AMPLIFIERS [J].

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JOLLY, ST .

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[5]

LIECHTI CA, 1972, ISSCC DIG TECH PAPER, P158

[6] X-BAND PERFORMANCE OF GAAS POWER FETS [J].

MACKSEY, HM ;

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WISSEMAN, WR .

ELECTRONICS LETTERS, 1976, 12 (02) :54-56

[7]

MACKSEY HM, 1975, 1975 P CORN C ACT SE, P255

[8] ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS [J].

RODE, DL ;

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DILORENZO, JV .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1119-1123

[9] SURFACE-TEMPERATURE LIMIT DETECTOR USING NEMATIC LIQUID-CRYSTALS WITH AN APPLICATION TO MICROCIRCUITS [J].

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[10]

TSERNG HQ, 1976, IEEE T MICROW THEORY, V24, P936, DOI 10.1109/TMTT.1976.1129003

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