USE OF A TIN BARRIER TO IMPROVE GAAS-FET OHMIC CONTACT RELIABILITY

被引：11

作者：

REMBA, RD ^{[1
]}

SUNI, I ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 438

页数：2

共 7 条

[1] SUBMICROMETER SELF-ALIGNED GAAS MESFET [J].

BAUDET, P ;

BINET, M ;

BOCCONGIBOD, D .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :372-376

[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[3]

FINITI M, 1984, J ELECTRON MATER, V13, P327

[4] RELIABILITY OF AUGE-PT AND AUGE-NI OHMIC CONTACTS ON GAAS [J].

LEE, CP ;

WELCH, BM ;

FLEMING, WP .

ELECTRONICS LETTERS, 1981, 17 (12) :407-408

[5] 12-18 GHZ MEDIUM-POWER GAAS MESFET AMPLIFIER [J].

NICLAS, KB ;

GOLD, RB ;

WILSER, WT ;

HITCHENS, WR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :520-527

[6] INVESTIGATION OF AU-GE-NI AND AU-GE-PT SYSTEM USED FOR ALLOYED CONTACTS TO GAAS [J].

WITTMER, M ;

FINSTAD, T ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :935-936

[7] BARRIER LAYERS - PRINCIPLES AND APPLICATIONS IN MICROELECTRONICS [J].

WITTMER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :273-280

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