12-18 GHZ MEDIUM-POWER GAAS MESFET AMPLIFIER

被引：11

作者：

NICLAS, KB

GOLD, RB

WILSER, WT

HITCHENS, WR

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1978年 / 13卷 / 04期

关键词：

D O I：

10.1109/JSSC.1978.1051088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：520 / 527

页数：8

共 20 条

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

BARRERA, JS ;

ARCHER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030

[2] SUBMICROMETER SELF-ALIGNED GAAS MESFET [J].

BAUDET, P ;

BINET, M ;

BOCCONGIBOD, D .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :372-376

[3] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[4] EQUIVALENT CIRCUIT OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR AT MICROWAVE-FREQUENCIES [J].

DAWSON, RH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, MT23 (06) :499-501

[5]

DILORENZO JV, 1977, AUG CORN C ACT MICR

[6] BROAD-BAND MEDIUM-POWER AMPLIFICATION IN 2-12.4-GHZ RANGE WITH GAAS MESFETS [J].

HORNBUCKLE, DP ;

KUHLMAN, LJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :338-342

[7]

HUANG H, 1975 INT EL DEV M DI, P235

[8]

Kellner W., 1975, Siemens Forschungs- und Entwicklungsberichte, V4, P137

[9]

Kurakowa K., 1965, BELL SYST TECH J, V44, P1675

[10] INTERDIGITATED STRIPLINE QUADRATURE HYBRID [J].

LANGE, J .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) :1150-&

← 1 2 →