BROAD-BAND MEDIUM-POWER AMPLIFICATION IN 2-12.4-GHZ RANGE WITH GAAS MESFETS

被引:11
作者
HORNBUCKLE, DP [1 ]
KUHLMAN, LJ [1 ]
机构
[1] HEWLETT PACKARD CO SANTA ROSA DIV,SANTA ROSA,CA 95404
关键词
D O I
10.1109/TMTT.1976.1128852
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:338 / 342
页数:5
相关论文
共 15 条
[1]   X-BAND AND KU-BAND AMPLIFIERS WITH GAAS SCHOTTKY-BARRIERS FIELD-EFFECT TRANSISTORS [J].
BAECHTOLD, W .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) :54-58
[2]  
CAMISA R, 1975, ELECTRON LETT, V11, P508
[4]   EQUIVALENT CIRCUIT OF SOME MICROSTRIP DISCONTINUITIES [J].
EASTER, B .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) :655-660
[5]  
Fano R. M., 1950, J FRANKLIN I, V249, P57, DOI DOI 10.1016/0016-0032(50)90006-8
[6]   MATRIX-METHODS FOR MICROSTRIP 3-DIMENSIONAL PROBLEMS [J].
FARRAR, A ;
ADAMS, AT .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (08) :497-&
[7]   DESIGN THEORY OF BALANCED TRANSISTOR AMPLIFIERS [J].
KUROKAWA, K .
BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (08) :1675-+
[10]   DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
LIECHTI, CA ;
TILLMAN, RL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) :510-517