SCATTERING OF HOLES OF A 2-DIMENSIONAL GAS NEAR GERMANIUM SURFACES CLEAVED IN LIQUID NITROGEN

被引：18

作者：

DOBROVOLSKII, VN

ZHARKIKH, YS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 6卷 / 02期

关键词：

D O I：

10.1002/pssa.2210060235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：655 / +

页数：1

共 32 条

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J].

ARNOLD, E ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1966, 9 (09) :344-&

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J].

COLMAN, D ;

BATE, RT ;

MIZE, JP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1923-&

[3] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[4]

Dobrovol'skii V. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P723

[5] SCATTERING OF HOLES OF A 2-DIMENSIONAL GAS NEAR CLEAVED GERMANIUM SURFACES [J].

DOBROVOLSKII, VN ;

ZHARKIKH, YS .

PHYSICA STATUS SOLIDI, 1970, 42 (01) :K33-+

[6]

DOBROVOLSKII VN, 1962, FIZ TVERD TELA, V4, P2760

[7]

DOBROVOLSKII VN, 1970, PRIB TEKH EKSP, V6, P199

[8]

DOBROVOLSKII VN, 1965, FIZ TVERD TELA, V7, P811

[9]

DOBROVOLSKII VN, TO BE PUBLISHED

[10]

FLIETNER H, 1959, ANN PHYS LPZ 7, V3, P396

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