EPITAXY OF LIF ON GE(100)

被引:71
作者
LAPIANOSMITH, DA
EKLUND, EA
HIMPSEL, FJ
TERMINELLO, LJ
机构
[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94550 USA
[2] BROOKHAVEN NATL LAB, NATL SYNCHROTRON LIGHT SOURCE, UPTON, NY 11973 USA
关键词
D O I
10.1063/1.106091
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of -2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3-7.6 eV.
引用
收藏
页码:2174 / 2176
页数:3
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