OBSERVATION OF A C-1S CORE EXCITON IN DIAMOND

被引：209

作者：

MORAR, JF

HIMPSEL, FJ

HOLLINGER, G

HUGHES, G

JORDAN, JL

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.54.1960

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1960 / 1963

页数：4

共 35 条

[1] CORE EXCITONS AND SOFT-X-RAY THRESHOLD OF SILICON
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[2] MODULATION SPECTROSCOPY IN FAR UV
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[3] FINE-STRUCTURE IN OPTICAL-TRANSITIONS FROM 3D AND 4D CORE LEVELS TO THE LOWER CONDUCTION-BAND IN GA-V AND IN-V COMPOUNDS
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[4] BASSANI F, 1980, APPL OPTICS, V9, P4093
[5] SOFT-X-RAY ELECTROREFLECTANCE - FINAL-STATE EFFECTS ON SI(2P) OPTICAL-TRANSITIONS
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[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 409 - 416
[6] EXTREME ULTRAVIOLET TRANSMISSION OF CRYSTALLINE AND AMORPHOUS SILICON
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RUSTGI, OP
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (08) : 497 - &
[7] BROWN FC, 1980, SYNCHROTRON RAD
[8] SHALLOW-DEEP CORE-EXCITON INSTABILITY IN SIXGE1-X ALLOYS
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STOTT, JP
BROWN, FC
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2157 - 2160
[9] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (27) : 1601 - 1605
[10] PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON
EBERHARDT, W
KALKOFFEN, G
KUNZ, C
ASPNES, D
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 88 (01): : 135 - 143

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