FINE-STRUCTURE IN OPTICAL-TRANSITIONS FROM 3D AND 4D CORE LEVELS TO THE LOWER CONDUCTION-BAND IN GA-V AND IN-V COMPOUNDS

被引:26
作者
ASPNES, DE
CARDONA, M
SAILE, V
SKIBOWSKI, M
SPRUSSEL, G
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
[2] UNIV MUNICH,SEKT PHYS,D-8000 MUNICH 40,FED REP GER
[3] UNIV KIEL,INST EXPTL PHYS,D-2300 KIEL 1,FED REP GER
关键词
D O I
10.1016/0038-1098(79)90176-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate fine structure in energy derivative reflectance (EDR) spectra near 20-21 eV in GaP, GaAs, and GaSb, and near 18-20 eV in InP, InAs, and InSb. Derived energy values for Xc1 thresholds in GaP and GaSb, and Lc1 and Xc1 thresholds in GaAs, agree well with previous Schottky barrier electroreflectance (ER) results. L-X structure splittings in EDR spectra of InAs and InSb, for which Schottky barrier ER measurements cannot be performed, are 0.29 and 0.44 eV, respectively. Estimates of expected locations of these structures, based on XPS and absorption data and band structure calculations, indicate energy deficits of 0.2 eV for In4d-Lc1 and 0.5 eV for In4d-Xc1 transitions, respectively. © 1979.
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页码:99 / 104
页数:6
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