TEMPERATURE COEFFICIENTS OF ENERGY SEPARATIONS BETWEEN GA-3D CORE LEVELS AND SP-3 VALENCE-CONDUCTION BANDS IN GAP

被引：7

作者：

ASPNES, DE

OLSON, CG

LYNCH, DW

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] IOWA STATE UNIV,DEPT PHYS,AMES,IA 50010

[3] ELECTR RESOURCES DEV AGCY AMES LAB,AMES,IA 50010

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.36.1563

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1563 / 1566

页数：4

共 38 条

[1] ELECTROREFLECTANCE OF GAP TO 27 EV [J].

ASPNES, DE ;

OLSON, CG .

PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1605-1607

[2] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW B, 1975, 12 (06) :2527-2538

[3] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].

ASPNES, DE .

PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&

[4] INFLUENCE OF SPATIALLY DEPENDENT PERTURBATIONS ON MODULATED REFLECTANCE AND ABSORPTION OF SOLIDS [J].

ASPNES, DE ;

FROVA, A .

SOLID STATE COMMUNICATIONS, 1969, 7 (01) :155-159

[5]

ASPNES DE, TO BE PUBLISHED

[6] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[7] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

AUVERGNE, D ;

CAMASSEL, J ;

MATHIEU, H ;

CARDONA, M .

PHYSICAL REVIEW B, 1974, 9 (12) :5168-5177

[8] DIELECTRIC DISPERSION AND PHONON LINE SHAPE IN GALLIUM PHOSPHIDE [J].

BARKER, AS .

PHYSICAL REVIEW, 1968, 165 (03) :917-&

[9]

BASSANI F, 1966, SEMICONDUCT SEMIMET, V1, P21

[10] TEMPERATURE-DEPENDENCE OF BAND-GAP IN SEMICONDUCTORS [J].

BAUMANN, K .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (01) :K71-K74

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