PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] SOFT-X-RAY ELECTROREFLECTANCE - FINAL-STATE EFFECTS ON SI(2P) OPTICAL-TRANSITIONS [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 409 - 416

[4] BAUER RS, COMMUNICATION

[5] EXTREME ULTRAVIOLET TRANSMISSION OF CRYSTALLINE AND AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (08) : 497 - &

[6] L2,3 THRESHOLD SPECTRA OF DOPED SILICON AND SILICON-COMPOUNDS [J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4781 - 4788

[7] CORE TRANSITIONS AND DENSITY OF CONDUCTION STATES IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (10) : 659 - +

[8] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +

[9] Daniels J., 1970, SPRINGER TRACTS MODE, V54, P77

[10] EBERHARDT W, NUCLEAR INSTRUM METH

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] SOFT-X-RAY ELECTROREFLECTANCE - FINAL-STATE EFFECTS ON SI(2P) OPTICAL-TRANSITIONS [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 409 - 416

[4] BAUER RS, COMMUNICATION

[5] EXTREME ULTRAVIOLET TRANSMISSION OF CRYSTALLINE AND AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (08) : 497 - &

[6] L2,3 THRESHOLD SPECTRA OF DOPED SILICON AND SILICON-COMPOUNDS [J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4781 - 4788

[7] CORE TRANSITIONS AND DENSITY OF CONDUCTION STATES IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (10) : 659 - +

[8] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +

[9] Daniels J., 1970, SPRINGER TRACTS MODE, V54, P77

[10] EBERHARDT W, NUCLEAR INSTRUM METH