SHALLOW-DEEP CORE-EXCITON INSTABILITY IN SIXGE1-X ALLOYS

被引：19

作者：

BUNKER, BA

HULBERT, SL

STOTT, JP

BROWN, FC

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.53.2157

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2157 / 2160

页数：4

共 18 条

[1] SUBSTITUTIONAL DONORS AND CORE EXCITONS IN MANY-VALLEY SEMICONDUCTORS [J].

ALTARELLI, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (03) :205-208

[2] WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE [J].

ALTARELLI, M ;

HSU, WY .

PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1346-1349

[3] CORE EXCITONS IN SOLIDS [J].

BASSANI, F .

APPLIED OPTICS, 1980, 19 (23) :4093-4100

[4] SURFACE-DEFECTS AND CORE EXCITONS AT THE (2X1) ASYMMETRIC-DIMER (100) SURFACE OF SI [J].

BOWEN, MA ;

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1984, 30 (08) :4617-4620

[5] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].

BRAUNSTEIN, R ;

MOORE, AR ;

HERMAN, F .

PHYSICAL REVIEW, 1958, 109 (03) :695-710

[6]

BROWN FC, 1978, NUCL INSTRUM METHODS, V152, P173

[7] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].

HIMPSEL, FJ ;

HEIMANN, P ;

CHIANG, TC ;

EASTMAN, DE .

PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115

[8] THEORY OF CORE EXCITONS [J].

HJALMARSON, HP ;

BUTTNER, H ;

DOW, JD .

PHYSICAL REVIEW B, 1981, 24 (10) :6010-6019

[9] ELECTRON-CORE-HOLE INTERACTION IN GAASP [J].

KELSO, SM ;

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW ;

FINN, D .

PHYSICAL REVIEW LETTERS, 1980, 45 (12) :1032-1035

[10] A SOLUTION OF THE CORE-EXCITON ISSUE FOR SILICON AND GERMANIUM [J].

MARGARITONDO, G ;

FRANCIOSI, A ;

STOFFEL, NG ;

EDELMAN, HS .

SOLID STATE COMMUNICATIONS, 1980, 36 (04) :297-300

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