LOW-TEMPERATURE FABRICATION OF HIGH-MOBILITY POLY-SI TFTS FOR LARGE-AREA LCDS

[1] THE THIN-FILM TRANSISTOR - A LATE FLOWERING BLOOM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1614 - 1628

[2] FEHLNER FP, 1986, P JAPAN DISPLAY 86, P200

[3] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[4] HAYASHI H, 1986, 18TH INT C SOL STAT, P549

[5] LEAMY HJ, 1982, GRAIN BOUNDARIES SEM, P65

[6] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281

[7] MIGLIORATO P, 1987, P EURODISPLAY, P44

[8] Ohwada J., 1987, 1987 SID International Symposium. Digest of Technical Papers. First Edition, P55

[9] SAKAI S, 1988, SID 88, P400

[10] ENHANCED STEP COVERAGE OF SIO2-FILMS SPUTTERED IN HYDROGEN-ARGON MIXED GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L259 - L260

[1] THE THIN-FILM TRANSISTOR - A LATE FLOWERING BLOOM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1614 - 1628

[2] FEHLNER FP, 1986, P JAPAN DISPLAY 86, P200

[3] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[4] HAYASHI H, 1986, 18TH INT C SOL STAT, P549

[5] LEAMY HJ, 1982, GRAIN BOUNDARIES SEM, P65

[6] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281

[7] MIGLIORATO P, 1987, P EURODISPLAY, P44

[8] Ohwada J., 1987, 1987 SID International Symposium. Digest of Technical Papers. First Edition, P55

[9] SAKAI S, 1988, SID 88, P400

[10] ENHANCED STEP COVERAGE OF SIO2-FILMS SPUTTERED IN HYDROGEN-ARGON MIXED GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L259 - L260