EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS

被引：91

作者：

FOSSUM, JG

ORTIZCONDE, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 08期

关键词：

D O I：

10.1109/T-ED.1983.21240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：933 / 940

页数：8

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