AN EXPERIMENTAL AND THEORETICAL-STUDY OF POLYCRYSTALLINE THIN-FILM TRANSISTOR

被引：5

作者：

BAUDRAND, H

HAMADTO, E

AMALRIC, JL

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1016/0038-1101(81)90175-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1093 / 1098

页数：6

共 8 条

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[2]

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[6] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].

PIKE, GE ;

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[7]

SETA YW, 1975, J APPL PHYS, V46, P5247

[8] CHARACTERIZATION OF GRAIN-BOUNDARIES USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8006-8009

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