CHARACTERIZATION OF GRAIN-BOUNDARIES USING DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：16

作者：

SPENCER, M

STALL, R

EASTMAN, LF

WOOD, CEC

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.325985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the rectifying characteristics of grain boundaries, modified deep-level transient spectroscopy (DLTS) and optical deep-level transient spectroscopy (ODLTS) sensitive techniques have been developed for identification and for quantitative estimation of electron and hole traps in the region of grain boundaries. This method has been used in conjunction with conventional surface oriented Schottky barrier DLTS and ODLTS techniques to show accumulation of native defects, enhanced segregation, and diffusion of copper from the substrate along grain boundaries during epitaxy of GaAs.

引用

页码：8006 / 8009

页数：4

共 13 条

[1]

GOTOH H, 1977, ANNUAL RES REPORT U

[2]

HUBER AM, UNPUBLISHED

[3] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].