THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW

被引:57
作者
AKERS, LA
SANCHEZ, JJ
机构
关键词
D O I
10.1016/0038-1101(82)90065-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:621 / 641
页数:21
相关论文
共 26 条
[1]  
AKEES LA, 1981, SOLID ST ELECTRON, V24, P621
[2]   A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT [J].
AKERS, LA ;
BEGUWALA, MME ;
CUSTODE, FZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1490-1495
[4]   THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET [J].
AKERS, LA .
ELECTRONICS LETTERS, 1981, 17 (01) :49-51
[5]   SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS [J].
BANDY, WR ;
KOKALIS, DP .
SOLID-STATE ELECTRONICS, 1977, 20 (08) :675-680
[6]   LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].
BARRON, MB .
SOLID-STATE ELECTRONICS, 1972, 15 (03) :293-+
[7]  
BUTERLA EM, 1980, ISSEE 80, P76
[8]  
Chatterjee P. K., 1980, International Electron Devices Meeting. Technical Digest, P28
[9]   A SIMPLE THEORY FOR THRESHOLD VOLTAGE MODULATION IN IGFETS [J].
CHENEY, GT ;
KOTCH, RA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :887-&
[10]   COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS [J].
COE, DJ ;
BROCKMAN, HE ;
NICHOLAS, KH .
SOLID-STATE ELECTRONICS, 1977, 20 (12) :993-998